Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 349-353

  Korsunskaya, N E ^a   Kaganovich, E B ^a   Khomenkova, L Yu ^a   Bulakh, B M ^a   Dzhumaev, B R ^a   Beketov, G V ^a   Manoilov, E G ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; DESORPTION; INFRARED RADIATION; LIGHT ABSORPTION; LIGHT TRANSMISSION; PHOTOLUMINESCENCE; POROUS SILICON;

PHOTOLUMINESCENCE EXCITATION (PLE);

SEMICONDUCTING SILICON;

EID: 0034300372     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00448-7     Document Type: Article

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