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Japanese Journal of Applied Physics, Part 2: Letters
Volumn 40, Issue 5 A, 2001, Pages
Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy
(3)
Sugiyama, Mutsumi
a,b
Nakanishi, Hisayuki
b
Chichibu, Shigefusa F
a,b
a
UNIVERSITY OF TSUKUBA
(
Japan
)
b
TOKYO UNIVERSITY OF SCIENCE
(
Japan
)
Author keywords
Band discontinuity; Chalcopyrite; Cu(Al,Ga)(S,Se)2; Heterointerface; UPS
Indexed keywords
COPPER; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PYRITES; SUBSTRATES; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;
BAND DISCONTINUITY; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY (UPS);
SEMICONDUCTING GALLIUM ARSENIDE;
EID
:
0035328925
PISSN
:
00214922
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1143/jjap.40.l428
Document Type
:
Article
Times cited : (
26
)
References (
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
