Emission characteristics of CuGaS2-based light-emitting diode grown by metalorganic vapor phase epitaxy

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 9-10, 2003, Pages 2001-2003

  Honda, Tohru ^a,b   Hara, Kazuhiko ^a   Yoshino, Junji ^a   Kukimoto, Hiroshi ^a,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KOGAKUIN UNIVERSITY   (Japan)

^c TOPPAN PRINTING CO LTD   (Japan)

Author keywords

Doping; Impurities; Light emitting diodes; Metalorganic vapor phase deposition; Semiconducting ternary compounds; Sulphides

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY;

FLOW RATE;

COPPER COMPOUNDS;

EID: 0041736338     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00254-3     Document Type: Conference Paper

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