Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process non-destructive evaluation

NDT and E International

Volumn 39, Issue 3, 2006, Pages 244-252

  Mandelis, Andreas ^a  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

Author keywords

Charge corners; Electronic defects; Non destructive imaging; Photocamer radiometry; Radiative recombination; Silicon wafers; Subsurface damage; Transport properties

Indexed keywords

DIFFUSION; IMAGING TECHNIQUES; NATURAL FREQUENCIES; NONDESTRUCTIVE EXAMINATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; SIGNAL PROCESSING; SILICON WAFERS;

DEEP SUB-SURFACE SCANNING IMAGING; PHOTO-CARRIER RADIOMETRY (PCR);

RADIOMETRY;

EID: 29144492969     PISSN: 09638695     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ndteint.2005.07.009     Document Type: Conference Paper

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