X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO

Journal of Physics and Chemistry of Solids

Volumn 66, Issue 12, 2005, Pages 2277-2280

  Sternemann, C ^a   Soininen, J A ^b   Volmer, M ^a   Hohl, A ^c   Vanko G ^d   Streit, S ^a   Tolan, M ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

^b UNIVERSITY OF HELSINKI   (Finland)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

A. Amorphous materials

Indexed keywords

AMORPHOUS MATERIALS; QUARTZ; SILICON; X RAY ANALYSIS;

MOMENTUM TRANSFERS; SUB-OXIDIC CONTRIBUTIONS;

RAMAN SCATTERING;

EID: 29144456015     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.09.050     Document Type: Conference Paper

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