Photochemically induced metallization of surface silicon using dinuclear metal carbonyl compounds. Anchoring of ruthenium to a Si(111) surface through covalent Ru-Si bond formation

Chemistry of Materials

Volumn 17, Issue 24, 2005, Pages 5951-5956

  Nalla, Praveen ^a   Huang, Shih Huang ^a   Zhang, Yibin ^a   Chyan, Oliver ^a   Richmond, Michael G ^a   Bouanani, Mohamed El ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ROOM TEMPERATURE; SURFACE SILICON;

CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; PHOTOCHEMICAL REACTIONS; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

RUTHENIUM COMPOUNDS;

EID: 28944439908     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0506757     Document Type: Article

References (64)

1. Shirai, H. Jpn. J. Appl. Phys. 1994, 33, L94.
2. (a) Higashi, G. S.; Chabal, Y. J.; Trucks, G. W.; Raghavachari, K. Appl. Phys. Lett. 1990, 56, 656.
3. (b) Higashi, G. S.; Becker, R. S.; Chabal, Y. J.; Becker, A. J. Appl. Phys. Lett. 1991, 58, 1656.
4. (c) Handbook of Semiconductor Wafer Cleaning Technology; Kern, W., Ed.; Noyes Publications: Park Ridge, NJ, 1993.
5. (d) Chen, J.-J.; Xu, F.; Ponnuswamy, T.; Chan, R.; Wu, J. J.; Prasad, A.; Chyan, O.; Sees, J. A.; Hall, L. H. Recent Res. Devel. Appl. Spectrosc. 2000, 3, 81.
6. (a) Gräf, D.; Grundner, M.; Schulz, R.; Mühlhoff, L. J. Appl. Phys. 1990, 68, 5155.
7. (b) Jakob, P.; Chabal, Y. J. J. Chem. Phys. 1991, 95, 2897.
8. (a) Waltenburg, H. N.; Yates, J. T. Chem. Rev. 1995, 95, 1589.
9. (b) Buriak, J. M. Chem. Rev. 2002, 102, 1271.
10. (a) Linford, M. R.; Fenter, P.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145.
11. (b) Buriak, J. M. Chem. Commun. 1999, 1051.
12. (c) Boukherroub, R.; Morin, S.; Bensebaa, F.; Wayner, D. D. M. Langmuir 1999, 15, 3831.
13. (d) Boukherroub, R.; Wayner, D. D. M. J. Am. Chem. Soc. 1999, 127, 11513.
14. (e) Sieval, A. B.; Vleeming, V.; Zuilhof, H.; Sudhölter, E. J. R. Langmuir 1999, 15, 8288.
15. (f) Haber, J. A.; Lauermann, I.; Michalak, D.; Vaid, T. P.; Lewis, N. S. J. Phys. Chem. B 2000, 104, 9947.
16. (g) Cicero, R. L.; Linford, M. R.; Chidsey, C. E. D. Langmuir 2000, 16, 5688.
17. (h) Boukherroub, R.; Morin, S.; Sharpe, P.; Wayner, D. D. M.; Allongue, P. Langmuir 2000, 16, 7429.
18. (i) Niederhauser, T. L.; Lua, Y.-Y.; Sun, Y.; Jiang, G.; Strossman, G. S.; Pianetta, P.; Linford, M. R. Chem. Mater. 2002, 14, 27.
19. (j) Lie, L. H.; Patole, S. N.; Hart, E. R.; Houlton, A.; Horrocks, B. R. J. Phys. Chem. B 2002, 106, 113.
20. (k) Lees, I. N.; Lin, H.; Canaria, C. A.; Gurtner, C.; Sailor, M. J.; Miskelly, G. M. Langmuir 2003, 19. 9812.
21. (a) Smith, K. C.; Sun, Y.-M.; Mettlach, N. R.; Hance, R. L.; White, J. M. Thin Solid Films 2000, 370, 73.
22. (b) Choi, Y. C.; Lee, B. S. Jpn. J. Appl. Phys. 1999, 38, 4876.
23. (c) Chyan, O.; Arunagari, T. N.; Ponnuswamy, T. J. Electrochem. Soc. 2003, 150, C347.
24. (d) Arunagiri, T. N.; Zhang, Y.; Chyan, O.; El-Bouanani, M.; Chen, K. H.; Wu, C. T.; Chen, L. C. Appl. Phys. Lett. 2005, 86, 8314.
25. (a) Geoffroy, G. L.; Wrighton, M. S. Organometallic Photochemistry; Academic Press: New York, 1979.
26. (b) Bitterwolf, T. E. Coord. Chem. Rev. 2000, 206-207, 419.
27. For a definitive example involving the production of ruthenium-centered radicals upon ruthenium-ruthenium bond homolysis in a doubly linked dicyclopentadienylruthenium complex, see: Klein, D. P.; Ovchinnikov, M. V.; Ellern, A.; Angelici, R. J. Organometallics 2003, 22, 3691.
28. Bruce, M. I.; Jensen, C. M.; Jones, N. L. Inorg. Synth. 1989, 26, 259.
29. (a) Duraczyñska, D.; Nelson, J. H. J. Chem. Soc., Dalton Trans. 2003, 449.
30. (b) Nelson, G. O.; Summer, C. E. Organometallics 1986, 5, 1983.
31. de V. Steyn, M. M.; Singleton, E.; Hietkamp, S.; Liles, D. C. J. Chem. Soc., Dalton Trans. 1990, 2991.
32. Shriver, D. F. The Manipulation of Air-Sensitive Compounds; McGraw-Hill: New York, 1969.
33. Tesmer, J. R.; Nastasi, M. Handbook of Modern Ion Beam Materials Analysis; Materials Research Society: Pittsburgh, 1995.
34. El Bouanani, M.; Pelicon, P.; Razpet, A.; Čadež, I.; Budnar, M.; Simčič, J. Submitted to Nucl. Instr. Methods Phys. Res. B.
35. Yang, S. K.; Peter, S.; Takoudis, C. G. J. Appl. Phys. 1994, 76, 4107.
36. (a) Harris, A. L.; Chabal, Y. J.; Ragavachari, K.; Tillu, J. C.; Int. J. Mod. Phys. B 1993, 7, 1031.
37. (b) Dumas, P.; Chabal, Y. J.; Jakob, P.; Appl. Surf. Sci. 1993, 65/66, 580.
38. (c) Pietsch, G. J.; Higashi, G. S.; Chabal, Y. J. Appl. Phys. Lett. 1994, 64, 3115.
39. (a) Lukehart, C. M. Fundamental Transition Metal Organometallic Chemistry; Brooks/Cole: Monterey, CA, 1985.
40. (b) Adams, D. M. Metal - Ligand and Related Vibrations; St. Martin's Press: New York, 1968.
41. Pannell, K. H.; Rozell, J. M.; Tsai, W.-M. Organometallics 1987, 6, 2085.
42. 2 θ.
43. (b) Cotton, F. A.; Wilkinson, G. Advanced Inorganic Chemistry, 3rd ed.; Wiley-Interscience: New York, 1972.
44. Okazaki, M.; Satoh, K.; Akagi, T.; Iwata, M.; Jung, K. A.; Shiozawa, R.; Okada, H.; Ueno, K.; Tobita, H.; Ogino, H. J. Organomet. Chem. 2002, 645, 201.
45. (a) Gassman, P. G.; Winter, C. H. J. Am. Chem. Soc. 1988, 110, 6130.
46. (b) Gassman, P. G.; Mickelson, J. W.; Sowa, J. R., Jr. J. Am. Chem. Soc. 1992, 114, 6942.
47. For XPS data on well-defined Ru(II) compounds, see: (a) Citrin, P. H. J. Am. Chem. Soc. 1973, 95, 6472.
48. (b) Shepherd, R. E.; Proctor, A.; Henderson, W. W.; Myser, T. K. Inorg. Chem. 1987, 26, 2440.
49. (c) Brant, P.; Stephenson, T. A. Inorg. Chem. 1987, 26, 22.
50. (d) Haga, M.; Hong, H.-G.; Shiozawa, Y.; Kawata, Y.; Monjushiro, H.; Fukuo, T.; Arakawa, R. Inorg. Chem. 2000, 39, 4566.
51. (e) Qi, H.; Sharma, S.; Li, Z.; Snider, G. L.; Orlov, A. O.; Lent, C. S.; Fehlner, T. P. J. Am. Chem. Soc. 2003, 125, 15250.
52. Collman, J. P.; Hegedus, L. S.; Norton, J. R.; Finke, R. G. Principles and Applications of Organotransition Metal Chemsitry; University Science Books: Mill Valley, CA, 1987.
53. Irradiation of Si(111) hydrogen-terminated wafers in the presence of added CO leads to loss of the surface hydrides and formation of a silicon oxide covered surface. Our control experiment is consistent with those data reported for the generation of siloxane materials from the reaction of CO and silylenes. See: Jones, K. L.; Pannell, K. H. J. Am. Chem. Soc. 1993, 115, 11336.
54. Albright, T. A.; Burdett, J. K.; Whangbo, M.-H. Orbital Interactions in Chemistry; Wiley: New York, 1985.
55. (a) Bergman, R. B.; Cundari, T. R.; Gillespie, A. M.; Gunnoe, B. T.; Harman, W. D.; Klinckman, T. R.; Temple, M. D.; White, D. P. Organometallics 2003, 22, 2331.
56. (b) Gemel, C.; Trimmel, G.; Slugovc, C.; Kremel, S.; Mereiter, K.; Schmid, R.; Kirchner, K. Organometallics 1996, 15, 3998.
57. Wagner, C. D.; Riggs, W. M.; Davis, L. E.; Moulder, J. F. In Handbook of X-ray Photoelectron Spectroscopy; Mullemberg, G. E., Ed.; Perkin-Elmer: Eden Prairie, MN, 1978.
58. Adams, H.; Bailey, N. A.; White, C. Inorg. Chem. 1983, 22, 1155.
59. Slugovc, C.; Sapunov, V. N.; Wiede, P.; Mereiter, K.; Schmid, R.; Kirchner, K. J. Chem. Soc., Dalton Trans. 1997, 4209.
60. 2. This latter value predicts a maximum Ru:Si coverage ratio of ca. 0.31.
61. (a) Abrahamson, H. B.; Palazzotto, M. C.; Reichel, C. L.; Wrighton, M. S. J. Am. Chem. Soc. 1979, 101, 4123.
62. (b) Macyk, W.; Herdegen, A.; Karocki, A.; Stochel, G.; Stasicka, Z.; Sostero, S.; Traverso, O. J. Photochem. Photobiol. A: Chem. 1997, 103, 221.
63. 3SnH by metal-centered radicals, see: (a) McCullen, S. B.; Brown, T. L. J. Am. Chem. Soc. 1982, 104, 7496.
64. (b) Sullivan, R. J.; Brown, T. L. J. Am. Chem. Soc. 1991, 113, 9155.