Hydrogen-bridge bonding on semiconductor surfaces: Density-functional calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 24, 2004, Pages 1-4

  Ripalda, J M ^a   Gale, J D ^b   Jones, T S ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b CURTIN UNIVERSITY   (Australia)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANION; CATION; DIAMOND; DIMER; GALLIUM ARSENIDE; GERMANIUM; HYDROGEN; SILICONE;

ARTICLE; CHEMICAL BINDING; CHEMICAL STRUCTURE; DENSITY FUNCTIONAL THEORY; DIMERIZATION; ENERGY; ENERGY COST; HYDROGEN BOND; POLARIZATION; SEMICONDUCTOR; STRUCTURE ANALYSIS; SURFACE CHARGE; SURFACE PROPERTY; THERMOSTABILITY;

EID: 14944378874     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.245314     Document Type: Article

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