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Volumn , Issue , 2005, Pages 24-30

Impact of via-line contact on Cu interconnect electromigration performance

Author keywords

Cu interconnect; Electromigration; Line depletion; Line extension; Liner; Redundancy; Reliability; Ta; Void

Indexed keywords

CU INTERCONNECTS; LINE DEPLETION; LINE EXTENSION; LINER; VOIDS;

EID: 28744458389     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (34)

References (13)
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    • Gill, J.1
  • 2
    • 2342631908 scopus 로고    scopus 로고
    • Line depletion electromigration characteristics of Cu interconnects
    • B. Li, et al, "Line Depletion Electromigration Characteristics of Cu Interconnects", IEEE Trans. On Dev. and Mat. Rel., 4 (2004) 80-85
    • (2004) IEEE Trans. on Dev. and Mat. Rel. , vol.4 , pp. 80-85
    • Li, B.1
  • 3
    • 1142300333 scopus 로고    scopus 로고
    • Reliability challenges for copper interconnects
    • B. Li, et al, "Reliability Challenges for Copper Interconnects", Microelectronics Reliability, 44 (2004) 365-380
    • (2004) Microelectronics Reliability , vol.44 , pp. 365-380
    • Li, B.1
  • 4
    • 0000555230 scopus 로고    scopus 로고
    • Mechanism for very long electromigration lifetime in dual damascene Cu interconnects
    • C-K, Hu, et al, "Mechanism for Very Long Electromigration Lifetime in Dual Damascene Cu Interconnects", Appl. Phys. Lett, 78(7), 2001, pp904-906.
    • (2001) Appl. Phys. Lett , vol.78 , Issue.7 , pp. 904-906
    • Hu, C.-K.1
  • 5
    • 0037805706 scopus 로고    scopus 로고
    • Effect of liner thickness on electromigration lifetime
    • E. G. Liniger, et al, "Effect of Liner Thickness on Electromigration Lifetime", J. Appl. Phys., 93(12), 2003, pp9576-9582.
    • (2003) J. Appl. Phys. , vol.93 , Issue.12 , pp. 9576-9582
    • Liniger, E.G.1
  • 6
    • 0000034975 scopus 로고    scopus 로고
    • Electromigration path in thin-film lines
    • C-K, Hu, et al, "Electromigration Path in Thin-Film Lines", App. Phys. Lett., 74(20), 1999, pp2945-2947.
    • (1999) App. Phys. Lett. , vol.74 , Issue.20 , pp. 2945-2947
    • Hu, C.-K.1
  • 7
    • 0037323106 scopus 로고    scopus 로고
    • Relationships between interfacial adhesion and electromigration in Cu metallization
    • M. W. Lane, et al, "Relationships between Interfacial Adhesion and Electromigration in Cu Metallization", J. Appl. Phys, 93 (2003), 1417-1421.
    • (2003) J. Appl. Phys , vol.93 , pp. 1417-1421
    • Lane, M.W.1
  • 9
    • 28744454436 scopus 로고    scopus 로고
    • Numerical modeling and characterization of the stress migration behavior upon various 90 nanometer Cu/low K interconnects
    • T. C. Huang, et al, "Numerical Modeling and Characterization of the Stress Migration Behavior upon Various 90 Nanometer Cu/Low K Interconnects,", Proc. IEEE 2003 Intern Interconnect Tech Conf (IITC), p207-209
    • Proc. IEEE 2003 Intern Interconnect Tech Conf (IITC) , pp. 207-209
    • Huang, T.C.1
  • 11
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    • Electromigration in narrow and large damascene copper lines
    • Oct. 18-21, Lake Tahoe, CA
    • V. Girault, et al, "Electromigration in Narrow and Large Damascene Copper Lines", Intern. Reliability Workshop (IRW), Oct. 18-21, 2004, Lake Tahoe, CA.
    • (2004) Intern. Reliability Workshop (IRW)
    • Girault, V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.