XPS study of residual oxide layers on p-GaAs surfaces

Applied Surface Science

Volumn 120, Issue 3-4, 1997, Pages 213-219

  Mihailova, Ts ^a   Velchev, N ^a   Krastev, V ^b   Marinova, Ts ^b  

^a UNIVERSITY OF PLOVDIV   (Bulgaria)

^b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ETCHING; HIGH TEMPERATURE EFFECTS; OXIDES; POINT DEFECTS; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

RESIDUAL OXIDE LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031387271     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00249-3     Document Type: Article

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