Chamber maintenance and fault detection technique for a gate etch process via self-excited electron resonance spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 125-129

  Baek, Kye Hyun ^a   Jung, Youngjae ^a   Min, Gyung Jin ^a   Kang, Changjin ^a   Cho, Han Ku ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ELECTRON RESONANCE; FAULT TREE ANALYSIS; PLASMA COLLISION PROCESSES; PROCESS CONTROL; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPIC ANALYSIS;

CHAMBER MAINTENANCE; FAULT DETECTION TECHNIQUES;

ETCHING;

EID: 28744440569     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1839913     Document Type: Article

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