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Volumn 18, Issue 4, 2005, Pages 644-647

A novel trench capacitor enhancement approach by selective liquid-phase deposition

Author keywords

Capacitance enhancement factor; Selective liquid phase deposition (S LPD); Trench bottle

Indexed keywords

CAPACITANCE ENHANCEMENT FACTOR; SELECTIVE LIQUID PHASE DEPOSITION (S-LPD); TRENCH BOTTLES;

EID: 28644439794     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.858527     Document Type: Conference Paper
Times cited : (6)

References (12)
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    • Kanba, K.1    Horiuchi, T.2    Murao, Y.3    Okumura, K.4
  • 5
    • 0025627399 scopus 로고
    • A new interlayer formation technology for completely planarized multilevel interconnection by using LPD
    • T. Homa et al., "A new interlayer formation technology for completely planarized multilevel interconnection by using LPD," in Proc. VLSI Symp., vol. 2-2, 1990, pp. 3-4.
    • (1990) Proc. VLSI Symp. , vol.2 , Issue.2 , pp. 3-4
    • Homa, T.1
  • 6
    • 0032269715 scopus 로고    scopus 로고
    • Applying selective liquid phase deposition to create contact holes in plasma damage-free process
    • C.-F. Yah and C.-H. Liu, "Applying selective liquid phase deposition to create contact holes in plasma damage-free process," in Proc. 3rd Int. Symp. Plasma Process-Induced Damage, 1998, pp. 223-226.
    • (1998) Proc. 3rd Int. Symp. Plasma Process-induced Damage , pp. 223-226
    • Yah, C.-F.1    Liu, C.-H.2
  • 8
    • 28644439186 scopus 로고
    • High quality thin oxide films formed by using ultra low temperature liquid phase deposition
    • C.-F. Yeh, S.-s. Lin, and T.-Y. Hong, "High quality thin oxide films formed by using ultra low temperature liquid phase deposition," Proc. EDMS, vol. 11, no. 21, p. 78, 1994.
    • (1994) Proc. EDMS , vol.11 , Issue.21 , pp. 78
    • Yeh, C.-F.1    Lin, S.-S.2    Hong, T.-Y.3
  • 9
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    • The improvement of liquid phase deposition of silicon dioxide with hydrocloric acid incorporation
    • M.-K. Lee, C.-H. Lin, C.-N. Yang, and C.-D. Yang, "The improvement of liquid phase deposition of silicon dioxide with hydrocloric acid incorporation," Jpn J. Appl. Phys., vol. 37, pp. L682-L683, 1998.
    • (1998) Jpn J. Appl. Phys. , vol.37
    • Lee, M.-K.1    Lin, C.-H.2    Yang, C.-N.3    Yang, C.-D.4
  • 10
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    • Novel technique for SiO2 formed by liquid-phase deposition for low-temperature processed polysilicon TFT
    • Jun.
    • C. F. Yeh, S.-S. Lin, C. L. Chen, and Y.-C. Yang, "Novel technique for SiO2 formed by liquid-phase deposition for low-temperature processed polysilicon TFT," IEEE Electron Device Lett., vol. 14, pp. 403-405, Jun. 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 403-405
    • Yeh, C.F.1    Lin, S.-S.2    Chen, C.L.3    Yang, Y.-C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.