Extending trench DRAM technology to 0.15μm groundrule and beyond

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 33-36

  Rupp, T ^a   Chaudhary, N ^a   Dev, K ^a   Fukuzaki, Y ^a   Gambino, J ^a   Ho, H ^a   Iba, J ^a   Ito, E ^a   Kiewra, E ^a   Kim, B ^a   Maldei, M ^a   Matsunaga, T ^a   Ning, J ^a   Rengarajan, R ^a   Sudo, A ^a   et al , ^a  

^a INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CAPACITANCE; CELLULAR ARRAYS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; MOS CAPACITORS; TECHNOLOGY;

BURIED STRAP; CONTACT RESISTANCE; GROUNDRULE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0033345508     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)