Ion-beam-induced amorphous structures in silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 974-978

  Bae, In Tae ^a   Ishimaru, Manabu ^a   Hirotsu, Yoshihiko ^a   Matsumura, Syo ^b   Sickafus, Kurt E ^c  

^a OSAKA UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Amorphous; Electron diffraction; Pair distribution function; Silicon carbide; Transmission electron microscopy

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; ELECTRON DIFFRACTION; IMAGING TECHNIQUES; ION BEAMS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMISTIC STRUCTURES;

SILICON CARBIDE;

EID: 0038412712     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00905-4     Document Type: Conference Paper

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