Surface oxidation of electromagnetically levitated molten silicon under a condition of oxygen-supersaturation

Scripta Materialia

Volumn 54, Issue 4 SPEC. ISS., 2006, Pages 695-699

  Hibiya, Taketoshi ^a   Hokama, Satoshi ^a   Koike, Yusuke ^a   Rinno, Masaki ^a   Kawamura, Hiroshi ^b   Fukuyama, Hiroyuki ^c   Higuchi, Kensuke ^d   Watanabe, Masahito ^d  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d GAKUSHUIN UNIVERSITY   (Japan)

Author keywords

Elemental semiconductors; Image analysis; Solidification; Thermodynamics; Undercooling

Indexed keywords

COOLING; EVAPORATION; IMAGE ANALYSIS; OXIDATION; SOLIDIFICATION; SUPERSATURATION; THERMODYNAMICS; THIN FILMS;

ELEMENTAL SEMICONDUCTORS; TEMPERATURE FLUCTUATION; UNDERCOOLING;

SILICON;

EID: 28544439730     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2005.07.043     Document Type: Article

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