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Volumn 96, Issue 4, 1989, Pages 747-755

Silicon crystal growth in a cusp magnetic field

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC FIELDS; OXYGEN;

EID: 0024715164     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(89)90631-3     Document Type: Article
Times cited : (78)

References (22)
  • 2
    • 84916172902 scopus 로고    scopus 로고
    • K. Hoshi, T. Suzuki, Y. Okubo and N. Isawa, in: Extended Abstracts of Electrochem. Soc. 1980 Spring Meeting, p. 811.
  • 8
    • 0023315603 scopus 로고
    • Three-dimensional simulations of the Czochralski bulk flow in a stationary transverse field and in a vertical magnetic field: Effects on the asymmetry of the flow and temperature distribution in the Si melt
    • (1987) Journal of Crystal Growth , vol.82 , pp. 318
    • Mihelčić1    Wingerath2
  • 15
    • 84916189093 scopus 로고    scopus 로고
    • Similar position of a liquid encapsulated GaAs melt surface was proposed by Japan. Patent, Laid-open No. 222984/1986. However in this case the purpose of the proposal is to apply a horizontal magnetic field on the surface to obtain a reduced radial temperature gradiant.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.