1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Applied Physics Letters

Volumn 87, Issue 11, 2005, Pages

  Han, Q ^a   Yang, X H ^a   Niu, Z C ^a   Ni, H Q ^a   Xu, Y Q ^a   Zhang, S Y ^a   Du, Y ^a   Peng, L H ^a   Zhao, H ^a   Tong, C Z ^a   Wu, R H ^a   Wang, Q M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION LAYERS; BRAGG REFLECTORS; TRANSFER MATRIX;

CURRENT DENSITY; MIRRORS; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

PHOTODETECTORS;

EID: 24944516234     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2048828     Document Type: Article

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