Field emission mechanism of oxidized highly phosphorus-doped homoepitaxial diamond (111)

Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

  Yamada, Takatoshi ^a   Nebel, Christoph E ^a   Rezek, Bohuslav ^a   Takeuchi, Daisuke ^a   Fujimori, Naoji ^a   Namba, Akihiko ^b   Nishibayashi, Yoshiki ^b   Yamaguchi, Hisato ^c   Saito, Ichitaro ^c   Okano, Ken ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^c INTERNATIONAL CHRISTIAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRON EMISSION; OXIDATION; PHOSPHORUS;

CONDUCTION-BAND ELECTRONS; ELECTRON AFFINITY; HOMOEPITAXIAL DIAMOND;

DIAMONDS;

EID: 28444467723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135875     Document Type: Article

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