Carbon nanotube gated lateral resonant tunneling field-effect transistors

Applied Physics Letters

Volumn 87, Issue 15, 2005, Pages 1-3

  Wang, D P ^a   Perkins, B R ^b   Yin, A J ^b   Zaslavsky, A ^b   Xu, J M ^b   Beresford, R ^b   Snider, G L ^c  

^a BROWN UNIVERSITY   (United States)

^b Brown University   (United States)

^c University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL GATE; ELECTROSTATIC POTENTIAL;

ELECTROSTATICS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; RESONANT TUNNELING;

CARBON NANOTUBES;

EID: 28344450743     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2089177     Document Type: Article

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