An investigation into three-level ferroelectric memory

Records of the IEEE International Workshop on Memory Technology, Design and Testing

Volumn , Issue , 2005, Pages 38-43

  Raiter, Kamlesh R ^a,b   Cockburn, Bruce F ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

^b Eleven Engineering Inc   (Canada)

Author keywords

Ferroelectric memory; Multilevel cells; Multilevel signaling; Ternary memory; Ternary signaling

Indexed keywords

ARRAYS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FLASH MEMORY;

FERROELECTRIC RANDOM-ACCESS MEMORY (FERAM); MULTILEVEL SIGNALING; TERNARY MEMORY; TERNARY SIGNALING;

RANDOM ACCESS STORAGE;

EID: 28344440115     PISSN: 10874852     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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