Process development and integration of electroless cobalt cap with low k carbon doped oxide

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 24-26

  Naik, M ^a   Shanmugasundram, A ^a   Weidman, T ^a   Fang, H ^a   Zhu, Z ^a   Mei, F ^a   Wang, Y ^a   Wijekoon, K ^a   Lubomirsky, D ^a   Pancham, I ^a   Armacost, M ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

Copper; Electroless; Integration; Low k

Indexed keywords

CARBON DIOXIDE; COPPER; DIELECTRIC PROPERTIES; ELECTROLESS PLATING; ELECTROMIGRATION; INTEGRATION; RELIABILITY;

ELECTROLESS; LEAKAGE PERFORMANCE; LOW K;

COBALT;

EID: 28244502085     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. L. Gosset et al, Integration and performance of an alternative approach using copper suicide as a self-aligned barrier for 45nm technology node Cu interconnects, Proceedings of 2004 International Interconnect Technology Conference, pp 15, June 2004.
2. T. Saito et al, A robust, deep sub-micron copper interconnect structure using self-aligned metal capping method, Proceedings of 2004 International Interconnect Technology Conference, pp 36, June 2004
3. D. Padhi, and G. Dixit, Key process parameters for copper electromigration, Solid State Technology, Vol 46(11), 2003.
4. S. Parikh et al, 300mm copper low-k integration and reliability for 90nm and 65nm nodes, Proceedings of 2004 International Interconnect Technology Conference, pp 60, June 2004.