Key process parameters for copper electromigration

Solid State Technology

Volumn 46, Issue 11, 2003, Pages 28-30

  Padhi, Deenesh ^a   Dixit, Girish A ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; COPPER; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; DIFFUSION; ELECTROMIGRATION; INTERFACES (MATERIALS); METALLIZING; MICROSTRUCTURE; PERMITTIVITY;

DIELECTRIC DIFFUSION-BARRIER LAYERS (DBL); METAL DIFFUSION-BARRIER LAYERS (MBL);

OPTICAL INTERCONNECTS;

EID: 0344036270     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (2)

1. G. Dixit, et al., Proc. International Interconnect Tech. Conference, IEEE, p. 162, 2003.
2. M.W. Lane, E.G. Liniger, J.R. Lloyd, J. Appl. Phys., 93, 1417, 2003.