A robust, deep-submicron copper interconnect structure using self-aligned metal capping method

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 36-38

  Saito, T ^a   Ashihara, H ^a   Ishikawa, K ^a   Miyauchi, Y ^a   Konishi, N ^a   Yamada, Y ^a   Uno, S ^a   Kubo, M ^a   Noguchi, J ^a   Oshima, T ^a   Aoki, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CLEANING; DEGRADATION; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; METALLIZING; RELIABILITY; SURFACE PHENOMENA;

COPPER INTERCONNECTS; SELF-ALIGNED METAL CAPPING METHOD; STRESS MIGRATION;

COPPER;

EID: 8644232638     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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