Light emission from as-prepared and oxidized Si nanowires with diameters of 5-15 nm

Journal of Crystal Growth

Volumn 285, Issue 4, 2005, Pages 620-626

  Zhang, Z Y ^a   Wu, X L ^a   Shen, J C ^a   Yang, L W ^a   Shi, Y ^a   Chu, Paul K ^b   Siu, G G ^b  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A1. Nanostructures; A3. Vapor liquid solid; B1. Nanowires; B2. Semiconducting silicon

Indexed keywords

CATALYSIS; HIGH TEMPERATURE EFFECTS; IRON; LIGHT EMISSION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL);

A1. NANOSTRUCTURES; A3. VAPOR-LIQUID-SOLID; B1. NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 28144465622     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.023     Document Type: Article

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