Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

Journal of Electronic Materials

Volumn 34, Issue 11, 2005, Pages 1368-1372

  Teynor, W A ^a   Vaccaro, K ^b   Buchwald, W R ^a   Dauplaise, H M ^b   Morath, C P ^b   Davis, A ^a   Roland, M A ^a   Clark, W R ^a,c  

^a SOLID STATE SCIENTIFIC CORPORATION   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c OPTOGRATION INC   (United States)

Author keywords

Cadmium sulfide (CdS); InGaAs InP; Mesa; p i n; Passivation; Photodetector

Indexed keywords

CADMIUM SULFIDE; HEAT TREATMENT; INDIUM COMPOUNDS; LEAKAGE CURRENTS; PASSIVATION; PHOTODETECTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

INGAAS/INP; MESA; P-I-N;

PHOTODIODES;

EID: 28144444696     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0192-4     Document Type: Article

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