Annealing influence on electrical transport mechanism of electroless deposited very thin Ag(W) films

Thin Solid Films

Volumn 496, Issue 2, 2006, Pages 515-519

  Inberg, A ^a   Ruzin, A ^a   Torchinsky, I ^a   Bogush, V ^a   Croitoru, N ^a   Shacham Diamand, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

Atomic force microscopy; Deposition process; Electrical properties and measurements; Silver

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTROLESS PLATING; SILVER; TRANSPORT PROPERTIES;

DEPOSITION PROCESS; ELECTRICAL PROPERTIES AND MEASUREMENTS; ELECTRICAL TRANSPORT; FILM MORPHOLOGY;

THIN FILMS;

EID: 28044461764     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.281     Document Type: Article

References (22)

1. R.C. Weast M.J. Astle Handbook of Chemistry and Physics 61st edition 1980-1981 CRC Press Florida E-86
2. T.E. Graedel J. Electrochem. Soc. 139 1992 1963
3. S.P. Murarka, R.J. Guttmann, A.E. Kaloyeros, and W.A. Lanford Thin Solid Films 236 1993 257
4. S.-Q. Wang, and J.W. Mayer J. Appl. Phys. 67 1990 2932
5. Y. Wang, and T.L. Alford Appl. Phys. Lett. 74 1999 52
6. T.P. Moffat, B. Baker, D. Wheeler, J.E. Bonevich, M. Edelstein, D.R. Kelly, L. Gan, G.R. Stafford, P.J. Chen, W.F. Egelhoff, and D. Josell J. Electrochem. Soc. 149 2002 C423
7. M. Hauder, J. Gstottner, and D. Schmitt-Landsiedel Appl. Phys. Lett. 78 2001 838
8. P.G. Johns, U.S. Patent No. 6168071, 2 Jan. 2001.
9. Y. Shacham-Diamand, A. Inberg, Y. Sverdlov, and N. Croitoru J. Electrochem. Soc. 147 2000 3345
10. A. Inberg, Y. Shacham-Diamand, E. Rabinovich, G. Golan, and N. Croitoru Thin Solid Films 389 2001 213
11. V. Bogush, A. Inberg, N. Croitoru, V. Dubin, and Y. Shacham-Diamand Thin Solid Films 426 2003 288
12. A. Inberg, V. Bogush, N. Croitoru, V. Dubin, and Y. Shacham-Diamand J. Electrochem. Soc. 150 2003 C285
13. E. Glickman, A. Inberg, V. Bogush, V. Dubin, Y. Shacham-Diamand, and N. Croitoru Microelectron. Eng. 70 2003 495
14. E. Glickman, A. Inberg, V. Bogush, Y. Shacham-Diamand, and N. Croitoru Microelectron. Eng. 76 2004 182
15. X. Yu, P.M. Duxbury, G. Jeffers, and M.A. Dubson Phys. Rev., B 44 1991 13163
16. J.M. Werrender, and M.J. Aziz Appl. Phys., A 79 2004 713
17. P. Brault, A.L. Thomann, and C. Andreazza-Vignolle Surf. Sci. 406 1998 L597
18. A.A. Baski, and H. Fuchs Surf. Sci. 313 1994 275
19. S.S. Cohen N.G. Einspruch S.S. Cohen G.S.h. Gildenblat VLSI Electronics, vol. 15, VLSI Metallization 1987 Academic Press Orlando 7
20. A.F. Mayadas, and S. Shatzkes Phys. Rev., B 1 1970 1383
21. S. Yamamuro, K. Sumiyama, T. Hihara, and K. Suzuki J. Phys. Condens. Mater. 11 1999 3247
22. L. Cheriet, H.H. Helbig, and S. Arjas Phys. Rev., B 39 1989 9828