On the mechanism of annealing effect in electrical resistivity of sub-100 nm Ag (1% W) films

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 182-189

  Glickman, E ^a   Inberg, A ^a   Bogush, V ^a   Aviram, G ^a   Croitoru, N ^a   Shacham Diamand, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

Electrical resistivity; Non thermal adatoms; Open porosity; Silver oxide decomposition; Sintering; Surface diffusion activation enthalpy and preexponent; Thin Ag films

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC CONDUCTIVITY OF SOLIDS; ENTHALPY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICA; THERMODYNAMIC STABILITY;

ADATOMS; OPEN POROSITY; PREEXPONENT; SURFACE DIFFUSION;

METALLIC FILMS;

EID: 4544303913     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.052     Document Type: Conference Paper

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