InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts

Solid-State Electronics

Volumn 49, Issue 12, 2005, Pages 1905-1908

  Su, Shui Hsiang ^a   Hou, Cheng Chieh ^a   Yokoyama, Meiso ^a   Chen, Shi Ming ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

InGaN GaN; Mesh; Multi quantum well; p Contact

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; LIGHT TRANSMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INGAN/GAN; MESH; MULTI-QUANTUM WELL; P-CONTACT;

LIGHT EMITTING DIODES;

EID: 28044455904     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.09.014     Document Type: Article

References (11)

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