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Volumn 270, Issue 1-3, 2000, Pages 91-96

Crystallization of n-doped amorphous silicon PECVD films: Comparison between SPC and RTA methods

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041610691 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(00)00063-6 Document Type: Article

Times cited : (7)

References (11)

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