Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1308-1311

  Ogawa, T ^a   Wang, G ^a   Murase, K ^a   Hori, K ^a   Arokiaraj, J ^a   Soga, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; GALLIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; PASSIVATION; PHOSPHORUS COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON SOLAR CELLS; SOLAR POWER GENERATION; SURFACE DEFECTS;

DEFECT PASSIVATION; GAAS SOLAR CELLS; GAAS SURFACES; HYDROGEN PLASMAS; MINORITY CARRIER LIFETIMES; RECOMBINATION VELOCITY; SI SUBSTRATES; SURFACE RECOMBINATIONS;

SOLAR CELLS;

EID: 27944434634     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916131     Document Type: Conference Paper

References (8)

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