Effect of MgO dopant on the microstructure and dielectric properties of rf-sputtered Ba 0.5Sr 0.5TiO 3 thin films

Journal of the Electrochemical Society

Volumn 152, Issue 11, 2005, Pages

  Chiu, Ming Chieh ^a   Lee, Ying Chieh ^b   Shieu, Fuh Sheng ^a,c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b Phycomp Taiwan Limited   (Taiwan)

^c ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANTS; ELECTRIC DIPOLES; OXYGEN VACANCIES; RADIO-FREQUENCY (RF) MAGNETRON SPUTTERING;

BARIUM COMPOUNDS; CAPACITORS; CURRENT DENSITY; LEAKAGE CURRENTS; MAGNESIA; MAGNETRON SPUTTERING; MICROSTRUCTURE; MORPHOLOGY; OXYGEN; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; RESIDUAL STRESSES; SOLID SOLUTIONS;

THIN FILMS;

EID: 27944479705     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2048167     Document Type: Article

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