Optimization of saturation current density of PECVD SiN coated phosphorus diffused emitters using neural network modeling

Journal of Electronic Materials

Volumn 25, Issue 11, 1996, Pages 1784-1789

  Cai, L ^a   Han, S ^a   May, G ^a   Kamra, S ^a   Krygowski, T ^a   Rohatgi, A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Interface state density; Photo assisted annealing; Plasma enhanced chemical vapor deposition (PECVD); SiN

Indexed keywords

EID: 5244379910     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-996-0036-x     Document Type: Article

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