Surface modifications of AIGaN/GaN sensors for water base nano- And picodroplets

Proceedings of IEEE Sensors

Volumn 2, Issue , 2004, Pages 1007-1010

  Buchheim, C ^a   Lebedev, V ^a   Yanev, V ^a   Kittler, G ^a   Fischer, M ^a   Ecke, G ^a   Ambacher, O ^a   Cimalla, V ^a   Krischok, S ^a   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

AlGaN; Fluorocarbon; Sensors

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL BONDS; HYDROPHOBICITY; SURFACE TREATMENT;

DEPOSITION METHOD; HYDROPHILIC SURFACE;

SENSORS;

EID: 27944439749     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, "Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures," J. Phys. C, vol. 14, pp. 3399-3434, 2002.
2. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann. K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol. 85, pp. 3222-3233, 1999.
3. R. Neuberger, G. Müller, O. Ambacher, and M. Stutzmann, "Ion-induced modulation of channel currents in AlGaN/GaN high-electron-mobility transistors," phys. stat. sol. (a), vol. 183, pp. RIO-R12, 2001.
4. R. Neuberger, G. Müller, O. Ambacher, and M. Stutzmann, "High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications," phys. stat. sol. (a), vol. 185, pp. 85-89, 2001.
5. D. D. Koleske, A. E. Wickenden, R. L. Henry, W. J. DeSisto, and R. J. Gonnan, "Growth model for GaN with comparison to structural, optical, and electrical properties," J. Appl. Phys., vol. 84, pp. 1998-2010, 1999.
6. P. Chen, R. Zhang, X. F. Xu, Z. Z. Chen, Y. G. Zhou, S. Y. Xie, Y. Shi. B. Shen, S. L. Gu, Z. C. Huang, J. Hu, and Y. D. Zheng, "Oxidation of gallium nitride cpilayers in dry oxygen," MRS Internet, J. Nitride Somicond. Res., vol. 5SI, p. W11.71, 2000.
7. B. Alberts, Molekularbiologie der Zelle. VCH Verlagsgesellschaft mbH, Weinheim, 1990.