Strain and defect engineering in Si/Si3N4/Si by high temperature-pressure treatment

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 174-178

  Misiuk, A ^a   Surma, B ^a   Barcz, A ^a   Orlinska, K ^b   Bak Misiuk, J ^b   Antonova, I V ^c   Dub, S ^d  

^a Department of Optical Fiber Technology and and Quantum Systems   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d BAKUL INSTITUTE FOR SUPERHARD MATERIALS   (Ukraine)

Author keywords

Hydrostatic pressure; Implantation; Nitrogen; Silicon nitride; Strain

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; HYDROSTATIC PRESSURE; MASS SPECTROMETRY; MICROHARDNESS; OXYGEN; PHOTOLUMINESCENCE; STRAIN;

DEFECT ENGINEERING; HYDROSTATIC PRESSURE (HP);

SILICON COMPOUNDS;

EID: 27944435417     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.029     Document Type: Conference Paper

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