Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 687-691

  Misiuk, A ^a   Barcz, A ^a   Ratajczak, J ^a   Bak Misiuk, J ^b   Antonova, I V ^c   Popov, V P ^c  

^a Department of Optical Fiber Technology and and Quantum Systems   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Cz Si:D; Gettering; High hydrostatic pressure; Microstructure

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL GROWTH FROM MELT; DEUTERIUM; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; ION IMPLANTATION; ISOTOPES; MICROSTRUCTURE; PHASE TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GETTERING; HIGH HYDROSTATIC PRESSURE;

SILICON WAFERS;

EID: 0347134668     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.166     Document Type: Conference Paper

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