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Volumn 118, Issue 1, 2006, Pages 106-110
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Radiative transitions of layered semiconductor GaS doped with P
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Author keywords
GaS; Impurity level; Layered semiconductor; P impurity; Photoluminescence
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Indexed keywords
BAND STRUCTURE;
MATHEMATICAL MODELS;
PHASE TRANSITIONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR MATERIALS;
EMISSION BANDS;
IMPURITY LEVEL;
LAYERED SEMICONDUCTOR;
TEMPERATURE DEPENDANCE;
PHOTOLUMINESCENCE;
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EID: 27844472685
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jlumin.2005.08.002 Document Type: Article |
Times cited : (6)
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References (18)
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