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Volumn 118, Issue 1, 2006, Pages 106-110

Radiative transitions of layered semiconductor GaS doped with P

Author keywords

GaS; Impurity level; Layered semiconductor; P impurity; Photoluminescence

Indexed keywords

BAND STRUCTURE; MATHEMATICAL MODELS; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

EID: 27844472685     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2005.08.002     Document Type: Article
Times cited : (6)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.