Trapping centers in undoped GaS layered single crystals

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 3-4, 2003, Pages 603-606

  Gasanly, N M ^a   Aydinli, A ^b   Yuksek N S ^a   Salihoglu, O ^b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL GROWTH; ELECTRIC CURRENT MEASUREMENT; ELECTRON TRAPS; SINGLE CRYSTALS; THERMAL EFFECTS;

BRIDGMAN TECHNIQUE; GALLIUM SULFIDE; THERMALLY STIMULATED CURRENT MEASUREMENTS; TRAPPING CENTERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0043159151     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-2035-y     Document Type: Article

References (15)

1. K. Aono, K Kase, A. Kinoshita: J. Appl. Phys. 74, 2818, (1993)
2. P. Braunlich (Ed.): Thermally Stimulated Relaxation in Solids (Springer-Verlag, Berlin 1979)
3. R. Chen, Y. Kirsh: Analysis of Thermally Stimulated Processes (Pergamon Press, Oxford 1981)
4. C. Manfredotti, C. De Blasi, S. Galassini, G. Micocci, L. Ruggiero, A. Tepore: Solid State Commun. 18, 1063 (1976)
5. C. De Blasi, S. Galassini, C. Manfredotti, G. Micocci, L. Ruggiero, A. Tepore. Phys. Status Solidi A 55, 291 (1979)
6. A. Rizzo, C. De Blasi, S. Galassini, G. Micocci, L. Ruggiero, A. Tepore: Solid State Commun. 40, 641 (1981)
7. G. Micocci, R. Rella, P. Siciliano, A. Tepore: J. Appl. Phys. 68, 138 (1990)
8. C. De Blasi, S. Galassini, G. Micocci, L. Ruggiero, A. Tepore, A. Rizzo: Mater. Chem. 4, 419 (1979)
9. G. Micocci, A. Rizzo, A. Tepore: J. Appl. Phys. 58, 1274 (1985)
10. A. Mercier, J.P. Voitchovsky: J. Phys. Chem. Solids 36, 1411 (1975)
11. G. Micocci, A. Rizzo, A. Tepore: J. Appl. Phys. 54, 1924 (1983)
12. T.A.T. Cowell, J. Woods: Br. J. Appl. Phys. 18, 1945 (1967)
13. K.H. Nicholas, J. Woods: Br. J. Appl. Phys. 15, 783 (1964)
14. R. Chen: J. Appl. Phys. 40, 570 (1969)
15. C. Manfredotti, R. Murri, A. Quirini, L. Vasanelli: Phys. Status Solidi 61, 685 (1976)