Radiative centers in layered semiconductor GaS doped with Zn

Journal of Luminescence

Volumn 113, Issue 1-2, 2005, Pages 137-142

  Shigetomi, S ^a   Ikari, T ^b  

^a KURUME UNIVERSITY   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

Impurity levels; Layered semiconductor; Photoluminescence

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; PHONONS; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; ZINC;

ACCEPTOR-VACANCY COMPLEX; IMPURITY LEVELS; LAYERED SEMICONDUCTORS; THERMAL STIMULATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18144370466     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2004.09.116     Document Type: Article

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