Comparison of the electronic structures of AlN nanotips grown on p-and n-type Si substrates

Journal of Physics Condensed Matter

Volumn 17, Issue 48, 2005, Pages 7523-7530

  Chiou, J W ^a   Tsai, H M ^a   Pao, C W ^a   Dong, C L ^a   Chang, C L ^a   Chien, F Z ^a   Pong, W F ^a   Tsai, M H ^b   Shi, S C ^c   Chen, C F ^c   Chen, L C ^d   Chen, K H ^e   Hong, I H ^f,h   Chen, C H ^f   Lin, H J ^f   Guo, J H ^g  

^a TAMKANG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e ACADEMIA SINICA   (Taiwan)

^f NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^g LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^h NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; NANOSTRUCTURED MATERIALS; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON;

FIELD-EMISSION INTENSITY; NANOTIPS; SCANNING PHOTOELECTRON SPECTROSCOPY (SPEM); X-RAY ABSORPTION NEAR-EDGE STRUCTURE (XANES);

ALUMINUM NITRIDE;

EID: 27844440867     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/48/006     Document Type: Article

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