Performing advanced post-CMP cleans to reduce copper defectivity and surface roughness

MICRO

Volumn 23, Issue 8, 2005, Pages 51-60

  Buley, Todd ^a   Epshteyn, Yakov ^a   Kulus, Mike ^a   Tran, Cuong ^b,c   Bartosh, Kyle ^b,c   Peters, Darryl ^b,c   Watts, Chris ^b,c  

^a ROHM AND HAAS COMPANY   (United States)

^b ATMI Surface Preparation Products ^*

^c ATMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BY-PRODUCT REMOVAL; COPPER DEFECTIVITY; DEFECT COUNTS; WATER-MARK FORMATION;

BUFFING; BYPRODUCTS; CLEANING; COPPER; DEFECTS; SURFACE ROUGHNESS;

CHEMICAL MECHANICAL POLISHING;

EID: 27744572099     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (5)

1. JG Park and AA Busnaina, "Adhesion and Removal of Silica and Alumina Slurry Particles during the Cu CMP Process," in Proceedings of the Electrochemical Society, vol. 2003-26 (Pennington, NJ: Electrochemical Society, 2004), 312-315.
2. M Hughes, S Naghshineh, and D Peters, "Open Circuit and Galvanostatic Behavior of Copper Oxidized and Reduced in Various Solutions," in Proceedings of the Electrochemical Society, vol. 2003-26 (Pennington, NJ: Electrochemical Society, 2004), 421-426.
3. K Bartosh et al., "Low Carbon Contamination and Water Mark Free Post-CMP Cleaning of Hydrophobic OSG Dielectrics," in Proceedings of the Electrochemical Society, vol. 2003-26 (Pennington, NJ: Electrochemical Society, 2004), 305-311.
4. DW Peters et al., "Eliminating Carbon and Water Marks during Post-CMP Cleaning," Solid State Technology 47, no. 11 (2004): 47-50.
5. Y Epshteyn et al., "Optimizing the Cleaning Processes after Cu CMP," in Proceedings of the CMP-MIC Conference (Tampa, FL: IMIC, 2004), 323-326.