Effect of thermal treatment on carbon-doped silicon oxide low dielectric constant materials

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 4, 2005, Pages 550-557

  Xie, J L ^a,b   Lin, J Y ^b   Wang, Y H ^a   Narayanan, B ^a   Wang, M R ^a   Kumar, R ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Carbon Doped; Low k Material; PECVD; Thermal Stability; TMCTS

Indexed keywords

INTERCONNECT TECHNOLOGY; LOW DIELECTRIC CONSTANT (LOW-K) MATERIALS; TETRAMETHYLCYCLOTE TRASILOXANE (TMCTS); THERMAL ENERGY;

ANNEALING; CARBON; DOPING (ADDITIVES); HYDROGEN BONDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY;

SILICON COMPOUNDS;

1,3,5,7 TETRAMETHYLCYCLOTERASILOXANE; 1,3,5,7-TETRAMETHYLCYCLOTERASILOXANE; CARBON; HYDROCARBON; OXYGEN; SILICON; SILOXANE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; HEAT; METABOLISM; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SPECTROMETRY; TEMPERATURE; TIME;

CARBON; HEAT; HYDROCARBONS; MICROSCOPY, ELECTRON, SCANNING; MODELS, CHEMICAL; NANOTECHNOLOGY; OXYGEN; SILICON; SILOXANES; SPECTROMETRY, X-RAY EMISSION; TEMPERATURE; TIME FACTORS;

EID: 27744490587     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.084     Document Type: Article

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