Residual strain around a step edge of artificial Al/Si (111) -7×7 nanocluster

Applied Physics Letters

Volumn 87, Issue 20, 2005, Pages 1-3

  Liu, Zhanwei ^a,c   Xie, Huimin ^a   Fang, Daining ^a   Dai, Fulong ^a   Xue, Qikun ^b   Liu, Hong ^b   Jia, Jinfeng ^b  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPRESSIVE STRESS; NANOSTRUCTURED MATERIALS; RESIDUAL STRESSES; SILICON COMPOUNDS;

NANOCLUSTERS; RESIDUAL STRAIN;

ALUMINUM COMPOUNDS;

EID: 27744440978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130722     Document Type: Article

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