Monolithic integration of high voltage driver circuits and MEMS actuators by ASIC-like postprocess

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Volumn 1, Issue , 2005, Pages 417-420

  Takahashi, K ^a   Kwon, H N ^a,b   Mita, M ^c   Fujita, H ^a   Toshiyoshi, H ^a   Suzuki, K ^d   Funaki, H ^d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

High voltage circuits; MEMS post process; Monolithic integration

Indexed keywords

DEEP REACTIVE ION ETCHING (DRIV); HIGH VOLTAGE CIRCUITS; MEMS POST PROCESS; MONOLITHIC INTEGRATION;

ELECTRIC POTENTIAL; ELECTROSTATIC ACTUATORS; MICROACTUATORS; MICROELECTROMECHANICAL DEVICES; MICROLENSES; MOS DEVICES; REACTIVE ION ETCHING; SCANNING;

NETWORKS (CIRCUITS);

EID: 27544486212     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2005.1496444     Document Type: Conference Paper

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