A comparison of extended defect formation induced by ion implantation in (0 0 0 1) and (1 1 2̄ 0) 4H-SiC

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 132-136

  Wong Leung, J ^a   Linnarsson, M K ^b   Svensson, B G ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

Extended defects; Ion implantation; Silicon carbide

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; HYDROGEN BONDS; ION IMPLANTATION; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL MOBILITY; DISLOCATION LOOPS; EXTENDED DEFECTS;

SILICON CARBIDE;

EID: 0346504213     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.052     Document Type: Conference Paper

References (7)

1. Yano H., Hirao T., Kimoto T., Matsunami H., Asano K., Sugarawa Y. IEEE Electron Dev. Lett. 20:1999;611.
2. Negoro Y., Miyamoto N., Kimoto T., Matsunami H. Appl. Phys. Lett. 80:2002;240.
3. Eryu O., Matsuo D., Abe K., Nakashima K. Mater. Sci. Forum. 389-393:2002;843.
4. Schmid F., Laube M., Pensl G., Wagner G., Maier M. J. Appl. Phys. 91:2002;9182.
5. Lhermitte-Sebire I., Vicens J., Chermant J.L., Levalois M., Paumier E. Philos. Mag. A. 69:1994;237.
6. Grisolia J., de Mauduit B., Gimbert J., Billon Th., Ben Assayag G., Bourgerette C., Claverie A. Nucl. Instrum. Methods B. 147:1999;62.
7. Ohno Toshiyuki, Kobayashi Naoto J. Appl. Phys. 89:2001;933.