Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 235-238

  Kohler K ^a   Muller S ^a   Rollbuhler N ^a   Kiefer, R ^a   Quay, R ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ELECTRON MOBILITY; ELLIPSOMETRY; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; PIEZOELECTRICITY; POWER AMPLIFIERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CONTACT LITHOGRAPHY; MULTIWAFER EPITAXY; SHEET RESISTANCE; SPECTRAL ELLIPSOMETRY (SE);

HETEROJUNCTIONS;

EID: 10444253933     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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5. Kiefer R and Quay R 2002 Workshop Notes: Wide Band Gap Materials, Microwave Theory Techniques Symposium, Seattle
6. Kiefer R, Quay R, Müller S, Köhler K, van Raay F, Raynor B, Pletschen W, Massler H, Ramberger S, Mikulla M and Weimann G 2002 Abstract Book: IEEE Lester Eastman Conference on High Performance Devices, Newark 78-79