Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AIN/SiC substrates

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2166-2169

  Park, Ji Soo ^a   Reitmeier, Zachary J ^a   Davis, Robert F ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SILICON CARBIDE; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION; THIN FILMS;

ANALOGOUS DEPOSITIONS; TRIETHYLGALLIUM (TEG); TRIMETHYLGALLIUM (TMG);

GALLIUM NITRIDE;

EID: 27344445906     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461373     Document Type: Conference Paper

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