Cr concentration dependence of magnetic and electrical properties of Cr-doped GaN films on Si (111) by MOMBE

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2488-2491

  Yamaguchi, K ^a   Tomioka, H ^a   Yui, T ^a   Suemasu, T ^a   Ando, K ^b   Yoshizaki, R ^a   Hasegawa, F ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SILICON; SQUIDS;

CR-DOPED GAN FILMS; DI-METHYL-HYDRAZINE (DMHY); MAGNETIC CIRCULAR DICHROISM (MCD); METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

GALLIUM NITRIDE;

EID: 27344441365     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461403     Document Type: Conference Paper

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