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Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 10, 2005, Pages 657-661

Optical, structural and electrical characteristics of aluminum oxynitride thin films deposited in an Ar-N gas mixture RF-sputtering system

(4) Araiza, J J a Aguilar Frutis, M b Falcony, C c Jergel, Ma c

a UNIVERSIDAD AUTÓNOMA DE ZACATECAS (Mexico)

b INSTITUTO POLITÉCNICO NACIONAL (Mexico)

c DEPARTAMENTO DE FÍSICA (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; OXYGEN; PERMITTIVITY; REFRACTIVE INDEX; SILICON; SPUTTER DEPOSITION; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS;

ALUMINUM OXYNITRIDE THIN FILMS; DIELECTRIC BREAKDOWN; RF SPUTTERING SYSTEM;

ALUMINUM COMPOUNDS;

EID: 27244438291 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-005-3741-y Document Type: Article

Times cited : (6)

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