메뉴 건너뛰기




Volumn 14, Issue 14, 2000, Pages 523-530

Properties and preparation of AlN thin films by reactive laser ablation with nitrogen discharge

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRATE; NITROGEN;

EID: 0034690985     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984900000689     Document Type: Article
Times cited : (8)

References (34)
  • 6
    • 0008039646 scopus 로고
    • Heteroepitaxial Semiconductors for Electronic Devices, eds. G. W. Cullen and G. C. Wang (Springer, New York)
    • (1987)
    • Duffy, M.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.