A novel a-Si: H AMOLED pixel circuit based on short-term stress stability of a-Si: H TFTs

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 737-739

  Chaji, G R ^a   Striakhilev, D ^a   Nathan, A ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Active matrix organic light emitting diode (AMOLED); Hydrogenated amorphous silicon (a Si:H); Thin film transistor (TFT); Threshold voltage shift (VT shift)

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; LIGHT EMITTING DIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE (AMOLED); HYDROGENATED AMORPHOUS SILICON; THRESHOLD VOLTAGE SHIFT;

THIN FILM TRANSISTORS;

EID: 27144550856     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855421     Document Type: Article

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