Gate current modeling for insulating gate III-N heterostructure field-effect transistors

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 561-566

  Clarke, Frederick W ^a   Ho, Fat Duen ^b   Khan, M Asif ^c   Simin, Grigory ^c   Yang, J ^c   Gaska, Remis ^d   Shur, Michael S ^e   Deng, Jianyu ^d   Karmalkar, S ^f  

^a US Army Space and Missile Defense Command   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^c The Department of Mechanical Engineering   (United States)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^e RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^f INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; PERFORMANCE; THRESHOLD VOLTAGE;

METAL OXIDE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; STRESS INDUCED LEAKAGE CURRENT;

GATES (TRANSISTOR);

EID: 0037695988     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l9.10     Document Type: Conference Paper

References (15)

1. M. Asif Khan, G. Simin, J. Yang, J. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu, and A. Tarakji, Insulating Gate III-N Heterostructure Field-Effect Transistors for High Power Microwave and Switching Applications, Submitted
2. M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur, AlGaN/GaN Metal-Oxide-Semiconductor Field Effect Transistor on SiC Substrates, Applied Physics Letters, Vol. 77, No. 9, pp. 1339-1341, 2000.
3. N. Pala, R. Gaska, M. S. Shur, J. Yang and M. A. Khan, Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates, Mat. Res. Soc. Proc, vol. 595, pp. W11.9.1-W11.9.6
4. T. H. Myers, R. M. Feenstra, M. S. Shur, H. Amano, Editors, MRS, Warrenton, PA, (2000)
5. MRS Internet J. Nitride Semicond. Res. 5S1, W11.9 (2000).
6. R. Caverly, Distortion in Gallium Nitride Microwave and RF Switch Control Circuits
7. M. Y. Doghish, F. D. Ho, A Comprehensive Analytical Model for Metal-Insulator-Semiconductor (MIS) Devices, IEEE Transactions on Electron Devices, v. 39, No. 12, p.2771, Dec. 1992
8. Y.-C. Yeo, Q. Lu, and C. Hu, "Gate Oxide Reliability: Anode Hole Injection Model and its Applications", Chapter 5 of Selected Topics in Electronics and Systems, vol. 23, Oxide Reliability- A Summary of Silicon Oxide Wearout, Breakdown, and Reliability, Ed. D. J. Dumin, World Scientific, pp. 233-270, 2002. ISBN 981-02-4842-3
9. E. J. Miller, X. Z. Dang and E. T. Yu, Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors, Journal of Applied Physics Volume 88, Number 10, November 15, 2000
10. Shreepad Karmalkar, D. Mahaveer Sathaiya, M. S. Shur, Mechanism of the Reverse Gate Leakage in AlGaN/GaN HEMTs, Submitted to APL
11. Xie, et al, A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC and RF Performance, IEEE EDL, Vol. 22, No. 7, pp312-314
12. C.B. Demelo, et al, High Electron Mobility InGaAs-GaAs FET with thermally Oxidized AlAs Gate Insulator, Electronics Letters, Vol. 36, No. 1, pp84-86
13. Zhifang Fan, S. N. Mohammad, O. Aktas, A. E. Botchkarev, A. Salvador and Hadis Morkoc, Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors, Appl. Phys. Lett. 69 (9), 26 August 1996
14. S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa and T. Mizutani, "Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors", Jpn. J. Appl. Phys. vol. 41, Part 1, No. 8, pp. 5125-5126, 2002.
15. M. S. Shur, A. D. Bykhovski, R. Gaska, and A. Khan, GaN-based Pyroelectronics and Piezoelectronics, in Handbook of Thin Film Devices, Volume 1: Hetero-structures for High Performance Devices, Edited by Colin E.C. Wood, Handbook edited by Maurice H. Francombe, Academic Press, San Diego, 299 (2000).